Nitrogen bearing sacrificial oxide with subsequent high nitrogen

Details Nitrogen bearing sacrificial oxide with subsequent high nitrogen Nitrogen bearing sacrificial oxide with subsequent high nitrogen

1997-12-23

2000-05-09

Fahmy, Wael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438526, 438775, H01L 2176

Patent

active

060603690

ABSTRACT:
A integrated circuit transistor that has a high nitrogen concentration in the channel region and a method of making same are provided. A sacrificial oxide layer integrated with a nitrogen bearing species is grown on the substrate. A portion of the nitrogen bearing species diffuses into the substrate to form a nitrogen doped region. Nitrogen is implanted through the first oxide layer to increase the peak concentration of nitrogen in the nitrogen doped region. The sacrificial oxide layer is removed and a very thin gate oxide layer is formed. A gate, a source, and a drain are formed. The result is an integrated circuit transistor with a very thin gate oxide layer and a high peak concentration of nitrogen substantially at the Si--SiO.sub.2 interface.

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Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 3--The Submicron MOSFET, pp. 367-407, 648-660, 1995.

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