Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-19
2006-09-19
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S649000
Reexamination Certificate
active
07109559
ABSTRACT:
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
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D'Emic Christopher P.
Hwang Thomas T.
Jamison Paul C.
Khare Mukesh V.
Quinlivan James J.
Cai Yuanmin
Doan Theresa T.
International Business Machines - Corporation
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