Nitride semiconductor wafer and method of processing nitride...

Details Nitride semiconductor wafer and method of processing nitride... Nitride semiconductor wafer and method of processing nitride...

2011-08-30

2011-08-30

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Warping of semiconductor substrate

C438S460000, C438S693000, C438S959000, C257SE21303

Reexamination Certificate

active

08008165

ABSTRACT:
Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

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