Nitride semiconductor substrate production method thereof...

Details Nitride semiconductor substrate production method thereof... Nitride semiconductor substrate production method thereof...

2005-11-22

2005-11-22

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S103000, C257S627000

Reexamination Certificate

active

06967359

ABSTRACT:
Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AlN molar fraction is selectively grown on a first group-III nitride semiconductor, such as GaN, to have a specific crystal face. Then, on the seed crystals, an AlGaN with a high AlN molar fraction is grown through a second group-III nitride semiconductor, such as AlN deposited at a low temperature. The present invention can provide an AlGaN-crystal substrate having a low dislocation density in a wide area without any crack, and a high-performance short-wavelength optical device using the substrate.

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