Nitride semiconductor substrate having a base substrate with...

Details Nitride semiconductor substrate having a base substrate with... Nitride semiconductor substrate having a base substrate with...

2011-03-29

2011-03-29

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S622000, C257SE21112, C257SE21127

Reexamination Certificate

active

07915698

ABSTRACT:
The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6106613 (2000-08-01), Sato et al.
patent: 7229499 (2007-06-01), Ishida
patent: 10-321535 (1998-12-01), None
patent: 10-0519326 (2005-09-01), None
patent: 10-2006-0030636 (2006-04-01), None

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