Nitride semiconductor material, semiconductor element, and...

Details Nitride semiconductor material, semiconductor element, and... Nitride semiconductor material, semiconductor element, and...

2011-03-29

2011-03-29

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

C257S194000, C257S649000, C257SE29252

Reexamination Certificate

active

07915646

ABSTRACT:
The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of nitrogen atoms of the group IV nitride in the interface and an arrangement of group III atoms of the group III nitride semiconductor in the interface may be substantially identical.

REFERENCES:
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patent: 7592211 (2009-09-01), Sheppard et al.
patent: 2004/0061129 (2004-04-01), Saxler et al.
patent: 2005/0106849 (2005-05-01), Gwo
patent: 2004-228481 (2004-08-01), None
M. Higashiwaki et al., “Cat-CVD SiN-Passivated alGaN-GaN HFETs with Thin and High Al Composition Barrier Layers”, IEEE Electron Device Letters, vol. 26, No. 3, pp. 139-141 (2005).
English language Abstract of JP 2004-228481.
M. Higashiwaki et al., “AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-Off Frequency of 152 GHz on Sapphire Substrates”, Japanese Journal of Applied Physics, vol. 44, No. 16, pp. 475-478 (2005).

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