Nitride semiconductor light-emitting element

Details Nitride semiconductor light-emitting element Nitride semiconductor light-emitting element

2006-04-25

2011-12-06

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257SE21126

Reexamination Certificate

active

08071986

ABSTRACT:
A nitride semiconductor light-emitting element11is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element11has an active region17including InX1AlY1Ga1-X1-Y1N well layers13(1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers15(1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers13and the InX2AlY2Ga1-X2-Y2N barrier layers15is not less than 2.4×10−20J nor more than 4.8×10−20J.

REFERENCES:
patent: 2004/0051107 (2004-03-01), Nagahama et al.
patent: 2003-115642 (2003-04-01), None
patent: 2004-6957 (2004-01-01), None
International Preliminary Report on Patentability and Written Opinion of The International Searching Authority issued in International Application No. PCT/JP2006/308640, dated Dec. 13, 2007.
Chinese Office Action issued in Patent Application No. 200680000584.6 dated on Jun. 27, 2008.

Affiliated with

Also associated with

Rating

Nitride semiconductor light-emitting element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor light-emitting element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor light-emitting element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4313318