Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2004-04-26
2008-12-09
Baumeister, Bradley W. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S094000, C257SE33001, C372S043010
Reexamination Certificate
active
07462882
ABSTRACT:
A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region102and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
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Ito Shigetoshi
Kamikawa Takeshi
Motoki Kensaku
Takakura Teruyoshi
Taneya Mototaka
Baumeister Bradley W.
Morrison & Foerster / LLP
Reames Matthew L
Sharp Kabushiki Kaisha
Sumitomo Electric Industries Ltd.
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