Nitride semiconductor light-emitting device having high...

Details Nitride semiconductor light-emitting device having high... Nitride semiconductor light-emitting device having high...

2011-07-19

2011-07-19

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S022000, C438S032000, C257S091000, C257S098000, C257SE21132, C257SE21293, C257SE33005, C257SE33074

Reexamination Certificate

active

07981775

ABSTRACT:
Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

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