Nitride semiconductor light emitting device chip

Details Nitride semiconductor light emitting device chip Nitride semiconductor light emitting device chip

2005-04-19

2005-04-19

Zararian, Zamir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S079000, C438S030000, C438S046000

Reexamination Certificate

active

06881981

ABSTRACT:
In a nitride semiconductor light emitting device chip, a mask pattern on a nitride semiconductor substrate (101) is formed of a growth inhibiting film on which a nitride semiconductor layer is hard to grow. There are a plurality of windows unprovided with the growth inhibiting film. There are at least two different widths as mask widths each between the adjacent windows. The mask pattern includes a mask A group (MAG) and mask B groups (MBG) arranged on respective sides of the mask A group. A mask A width in the mask A group is wider than a mask B width in the mask B group. The nitride semiconductor light emitting device chip further includes a nitride semiconductor underlayer (102) covering the windows and the mask pattern, and a light emitting device structure having a light emitting layer (106) including at least one quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the underlayer. A current-constricting portion (RS) through which substantial current is introduced into the light emitting layer is formed above mask A.

REFERENCES:
patent: 08-064870 (1996-03-01), None
patent: 2000-021789 (2000-01-01), None
patent: 2000-183462 (2000-06-01), None
Shin-ichi Nagahama et al., Jpn. J. Appl. Phys., vol. 39 (2000), “High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown On Low-Dislocation-Density GaN Substrates” Part 2, No. 7A, Jul. 1, 2000, pp L647-L650.

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