Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-03-14
2006-03-14
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C257S094000, C257S097000, C257S012000, C257S013000, C438S022000, C438S024000, C438S046000, C438S047000
Reexamination Certificate
active
07012284
ABSTRACT:
Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.
REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 6541798 (2003-04-01), Koike et al.
patent: 10-2001-0068551 (2001-07-01), None
patent: 10-2002-0021247 (2002-03-01), None
Choi Hee Seok
Choi Seok Beom
Oh Bang Won
Lowe Hauptman & Berner LLP
Samsung Electro-Mechanics Co. Ltd.
Tran Mai-Huong
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