Nitride semiconductor light-emitting device and method for...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C372S049010, C257SE27119

Reexamination Certificate

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07820542

ABSTRACT:
An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.

REFERENCES:
patent: 4317086 (1982-02-01), Scifres et al.
patent: 5180685 (1993-01-01), Yamamoto et al.
patent: 5556804 (1996-09-01), Nagai
patent: 5661741 (1997-08-01), Kakimoto
patent: 5689123 (1997-11-01), Major et al.
patent: 5742628 (1998-04-01), Fujii
patent: 6379985 (2002-04-01), Cervantes et al.
patent: 6387721 (2002-05-01), Hashimoto et al.
patent: 6803605 (2004-10-01), Lindstrom et al.
patent: 6856636 (2005-02-01), Ohgoh et al.
patent: 7084421 (2006-08-01), Koike et al.
patent: 7129163 (2006-10-01), Sherrer et al.
patent: 2002/0024981 (2002-02-01), Tojo et al.
patent: 2002/0030200 (2002-03-01), Yamaguchi et al.
patent: 2002/0141469 (2002-10-01), Yamasaki et al.
patent: 2003/0186088 (2003-10-01), Kato et al.
patent: 2004/0238810 (2004-12-01), Dwilinski et al.
patent: 2005/0127383 (2005-06-01), Kikawa et al.
patent: 2007/0246720 (2007-10-01), Kamikawa et al.
patent: 09-162496 (1997-06-01), None
patent: 09-283843 (1997-10-01), None
patent: 2002-100830 (2002-04-01), None
patent: 2002-335053 (2002-11-01), None
patent: 2003-060298 (2003-02-01), None
patent: 2004-335559 (2004-11-01), None
patent: 2005-101536 (2005-04-01), None
patent: 2005/0127383 (2005-06-01), None
Office Action for co-pending U.S. Appl. No. 11/638,581 dated Apr. 9, 2008.
Shingo Masui et al., “First-Order AIInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection,” Jpn. J. Appl. Phys. 45 (2006) (pp. L749-L751).
Shin-ichi Nagahama et al., “Wavelength Dependence of InGaN Laser Diode Characteristics,” Jpn. J. Appl. Phys. 40 (2001) (pp. 3075-3081).
Masahi Kubota et al., “Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” Appl. Phys. Express 1 (2008) (pp. 011102-1-011102-3).
Shuji Nakamura et al., “InGaN/GaN/AIGaN-Based Laser Diodes with Cleaved Facets Grown on GaN Substrates,” Appl. Phys. Lett. 73 (Aug. 10, 1998) (6) (pp. 832-834).
Statement of Relevance and partial English translation of JP 2005-101536.

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