Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-07-05
2011-07-05
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C267S251000, C267S251000, C438S046000
Reexamination Certificate
active
07973322
ABSTRACT:
An active layer17is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region13, the active layer17, and a second conduction type gallium nitride-based semiconductor region15are disposed in a predetermined axis Ax direction. The active layer17includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.
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Akita Katsushi
Ishibashi Keiji
Kasai Hitoshi
Kyono Takashi
Dickey Thomas L
Sartori Michael A.
Schwarz Steven J.
Sumitomo Electric Industries Ltd.
Venable LLP
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