Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-03-08
2011-03-08
Sayadian, Hrayr A (Department: 2814)
Coherent light generators
Particular active media
Semiconductor
C372S045010, C372S050100, C257S012000, C257S013000, C257S014000, C257S015000, C257S079000, C257S094000, C257S095000, C257S099000, C257S103000, C257S183000, C257S190000, C257S200000, C257S201000, C257S618000, C257SE21108, C257SE33001, C257SE33002, C257SE33005, C257SE33013, C257SE33033, C257SE33043, C438S022000, C438S029000, C438S042000, C438S043000, C438S044000, C438S046000, C438S047000, C313S506000
Reexamination Certificate
active
07903707
ABSTRACT:
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.
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Internatinoal Search Report.
Kamikawa Takeshi
Kaneko Yoshika
Motoki Kensaku
Harness & Dickey & Pierce P.L.C.
Sayadian Hrayr A
Sharp Kabushiki Kaisha
Sumitomo Electric Industries Ltd.
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