Nitride semiconductor light-emitting device

Details Nitride semiconductor light-emitting device Nitride semiconductor light-emitting device

2011-03-08

2011-03-08

Sayadian, Hrayr A (Department: 2814)

Coherent light generators

Particular active media

Semiconductor

C372S050100, C372S045010, C257S094000, C257S103000, C257S079000, C257SE21108, C257SE33001, C257S183000, C257S200000, C257S201000, C257SE33013, C257SE33043, C257SE33002, C438S042000, C438S043000, C438S044000, C438S046000, C438S047000

Reexamination Certificate

active

07903710

ABSTRACT:
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

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International Search Report.

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