Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-03-08
2011-03-08
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S094000, C257S103000
Reexamination Certificate
active
07902544
ABSTRACT:
The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
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Japanese Office Action issued in Japanese Patent Application No. 2006-272045, dated Oct. 23, 2009.
Kang Sang Won
Kim Je Won
Kim Sun Woon
Oh Bang Won
Song Keun Man
McDermott Will & Emery LLP
Nguyen Cuong Q
Samsung LED Co., Ltd
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