Nitride semiconductor light emitting device

Details Nitride semiconductor light emitting device Nitride semiconductor light emitting device

2006-10-23

2008-12-09

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S097000, C257S101000, C257S103000, C257SE33034

Reexamination Certificate

active

07462876

ABSTRACT:
Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

REFERENCES:
patent: 6515308 (2003-02-01), Kneissl et al.
patent: 2003/0047744 (2003-03-01), Yanamoto
patent: 2004/0051107 (2004-03-01), Nagahama et al.

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