Nitride semiconductor light emitting device

Details Nitride semiconductor light emitting device Nitride semiconductor light emitting device

1997-03-12

2000-06-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257103, 372 43, 372 44, 372 45, 438 46, 438 47, H01L 3300

Patent

active

060810017

ABSTRACT:
A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors ranging from 0.3 nm to 1.5 nm.

REFERENCES:
patent: 5617438 (1997-04-01), Hatano et al.
patent: 5764842 (1998-06-01), Aoki et al.
patent: 5786603 (1998-07-01), Rennie et al.
patent: 5866440 (1999-02-01), Hata

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