Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2006-07-18
2006-07-18
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S045000
Reexamination Certificate
active
07078256
ABSTRACT:
A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
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Kim Young Hoon
Oh Bang Won
Park Jin Sub
Ryu Yung Ho
Yang Kee Jeong
Chaudhari Chandra
Lowe Hauptman & Berner LLP.
Samsung Electro-Mechanics Co. Ltd.
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