Nitride semiconductor laser element

Details Nitride semiconductor laser element Nitride semiconductor laser element

2011-08-09

2011-08-09

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045010, C372S046010, C372S046016

Reexamination Certificate

active

07995634

ABSTRACT:
A nitride semiconductor laser element exhibits high-speed responsiveness by largely reducing the capacitance of the nitride semiconductor laser element. The nitride semiconductor laser element includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer each laminated on the main surface of the substrate. The nitride semiconductor laser element further includes a striped ridge portion formed in the p-type semiconductor layer, and pn-junctions of the semiconductor layer in the peripheral region remote from the ridge portion are broken by ion implantation to form an insulative region for reducing the capacitance of the element.

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Office Action issued in related Japanese Appln. No. 2005-057761 (Apr. 25, 2011) w/English language translation.

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