MUGFET with optimized fill structures

Details MUGFET with optimized fill structures MUGFET with optimized fill structures

2011-02-15

2011-02-15

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21440, C257SE27112

Reexamination Certificate

active

07888736

ABSTRACT:
A semiconductor structure includes active multi-gate fin-type field effect transistor (MUGFET) structures and inactive MUGFET fill structures between the active MUGFET structures. The active MUGFET structures comprise transistors that change conductivity depending upon voltages within gates of the active MUGFET structures. Conversely, the inactive MUGFET fill structures comprise passive devices that do not change conductivity irrespective of voltages within gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures are parallel to the gates of the inactive MUGFET fill structures, and the fins of the active MUGFET structures are the same size as the fins of the inactive MUGFET fill structures. The active MUGFET structures have the same pitch as the gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures comprise active doping agents, but the inactive MUGFET fill structures do not contain the active doping agents.

REFERENCES:
patent: 2004/0195628 (2004-10-01), Wu et al.
patent: 2006/0275988 (2006-12-01), Yagishita et al.
patent: 2008/0203540 (2008-08-01), Anderson et al.
patent: 2008/0283925 (2008-11-01), Berthold et al.
patent: 2008/0296681 (2008-12-01), Georgakos et al.
patent: 2009/0050975 (2009-02-01), Bryant et al.

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