Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-11-09
2010-02-16
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045012
Reexamination Certificate
active
07664151
ABSTRACT:
A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. The semiconductor has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleaved facet, the cleaved facet forming a facet mirror.
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Ueda Daisuke
Ueda Tetsuzo
Harvey Minsun
McDermott Will & Emery LLP
Nguyen Tuan N.
Panasonic Corporation
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