Nitride semiconductor laser diode

Details Nitride semiconductor laser diode Nitride semiconductor laser diode

2011-07-05

2011-07-05

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045012

Reexamination Certificate

active

07974322

ABSTRACT:
A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.

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