Nitride semiconductor laser device and method of...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S462000

Reexamination Certificate

active

10888497

ABSTRACT:
The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.

REFERENCES:
patent: 6456638 (2002-09-01), Fukunaga
patent: 2003/0030053 (2003-02-01), Nawakami et al.
patent: 2003/0123503 (2003-07-01), Matsumoto et al.
Shuji Nakamura et al., High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates, Japanese Journal of Applied Physics, Mar. 1998, pp. L309-L312, vol. 37, Part 2, No. 3B, The Japan Society of Applied Physics and The Physical Society of Japan.
Zheleva, T. et al., “Dislocation Density Reduction Via Lateral Expitaxy in Selectively Grown GaN Structures”, Applied Physics Letters, pp. 2472-2474, Oct. 1997, vol. 71, No. 17, American Institute of Physics, New York, U.S.A.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nitride semiconductor laser device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor laser device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor laser device and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3951886

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.