Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-08-14
2009-12-29
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S046000, C438S022000, C117S088000, C117S104000, C257SE21085
Reexamination Certificate
active
07638346
ABSTRACT:
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106cm−2.
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J. A. Smart, A. T. Schr
Bettles Timothy J.
Bondokov Robert T.
Liu Shiwen
Morgan Kenneth E.
Schowalter Leo J.
Crystal IS Inc.
Goodwin & Procter LLP
Monbleau Davienne
Reames Matthew
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