Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-07-26
2005-07-26
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S013000, C257S079000, C257S080000, C257S086000, C257S094000, C257S103000, C257S184000, C257S431000, C257S432000, C257S436000
Reexamination Certificate
active
06921928
ABSTRACT:
In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.
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Nichia Corporation
Smith Patent Office
Soward Ida M.
Zarabian Amir
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