Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant – For compound semiconductor
Reexamination Certificate
2011-04-05
2011-04-05
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
For compound semiconductor
C257S615000, C257S628000, C257SE31019
Reexamination Certificate
active
07919831
ABSTRACT:
The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substrate, oxygen is doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride bulk crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride bulk crystal, and eliminating the seed crystal from the bulk crystal.
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Motoki Kensaku
Ueno Masaki
Smith , Gambrell & Russell, LLP
Smoot Stephen W
Sumitomo Electric Industries Ltd.
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