Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2006-09-12
2006-09-12
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S031000, C257S103000, C257SE33028, C257SE33030
Reexamination Certificate
active
07105857
ABSTRACT:
A substrate1for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers3to5,an active layer6and p-type nitride semiconductor layers7to8are laminated to form a stack of nitride semiconductor on the first face of the substrate1.A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer8.A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate1for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer9and the second bonding layer11are faced with each other and, then, pressed with heat to bond together. After that, the substrate1for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
REFERENCES:
patent: 5376580 (1994-12-01), Kish et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5599403 (1997-02-01), Kariya et al.
patent: 5909081 (1999-06-01), Eida et al.
patent: 5959316 (1999-09-01), Lowery
patent: 6409938 (2002-06-01), Comanzo
patent: 6455340 (2002-09-01), Chua et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6661030 (2003-12-01), Komoto et al.
patent: 6692136 (2004-02-01), Marshall et al.
patent: 6756731 (2004-06-01), Sano
patent: 2001/0015443 (2001-08-01), Komoto
patent: 2001/0017874 (2001-08-01), Ishida
patent: 2001/0042866 (2001-11-01), Coman et al.
patent: 2003/0062530 (2003-04-01), Okazaki et al.
patent: 2003/0189215 (2003-10-01), Lee et al.
patent: 2004/0021407 (2004-02-01), Baillie et al.
patent: 1 061 590 (2000-12-01), None
patent: 50-091292 (1975-07-01), None
patent: 52-004175 (1977-01-01), None
patent: 58-195276 (1983-11-01), None
patent: 61-007671 (1986-01-01), None
patent: 61-059886 (1986-03-01), None
patent: 61-182256 (1986-08-01), None
patent: 61-182292 (1986-08-01), None
patent: 61-183986 (1986-08-01), None
patent: 4-010418 (1992-01-01), None
patent: 4-029374 (1992-01-01), None
patent: 4-057329 (1992-02-01), None
patent: 5-029663 (1993-02-01), None
patent: 5-198689 (1993-08-01), None
patent: 6-232510 (1994-08-01), None
patent: 6-302857 (1994-10-01), None
patent: 7-086640 (1995-03-01), None
patent: 7-263553 (1995-10-01), None
patent: 9-008403 (1997-01-01), None
patent: 9-129932 (1997-05-01), None
patent: 10-117016 (1998-05-01), None
patent: 10-163525 (1998-06-01), None
patent: 10-270761 (1998-10-01), None
patent: 11-068157 (1999-03-01), None
patent: 11-506872 (1999-06-01), None
patent: 11-214744 (1999-08-01), None
patent: 11-340518 (1999-12-01), None
patent: 2000-067673 (2000-03-01), None
patent: 2000-077723 (2000-03-01), None
patent: 2000-183408 (2000-06-01), None
patent: 2000-277804 (2000-06-01), None
patent: 2000-196141 (2000-07-01), None
patent: 2000-196152 (2000-07-01), None
patent: 2000-228537 (2000-08-01), None
patent: 2000-299503 (2000-10-01), None
patent: 2001-007394 (2001-01-01), None
patent: 2001-015817 (2001-01-01), None
patent: 2001-085747 (2001-03-01), None
patent: 2001-144331 (2001-05-01), None
patent: 2001-196645 (2001-07-01), None
patent: 2001-203385 (2001-07-01), None
patent: 2001-203392 (2001-07-01), None
patent: 2001-206710 (2001-07-01), None
patent: 2001-253294 (2001-09-01), None
patent: 2001-284641 (2001-10-01), None
patent: 2001-298214 (2001-10-01), None
patent: 2001-313422 (2001-11-01), None
patent: 2002-154900 (2002-05-01), None
patent: WO 97/00535 (1997-01-01), None
patent: WO 03/34508 (2003-04-01), None
Morita et al. “High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure”, Jpn. J. Appln. Phys. vol. 41, Part 2, No. 12B Dec. 2002, pp. L1434-L1436.
Office Action mailed Jul. 14, 2005, directed to related U.S. Appl. No. 10/673,273.
Office Action mailed Nov. 4, 2005, directed to related U.S. Appl. No. 10/673,273.
Wong, W. S. et al. (2000) “InxGa1-xN Light Emitting Diodes on Si Substrates Fabricated by Pd-In Metal Bonding and Laser Lift-Off,” Applied Physics Letters 77(18), pp. 2822-2824.
Kneissl, Michael et al. (2001) “Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff,” IEEE Journal on Selected Topics in Quantum Electronics 7(2), pp. 188-191.
Japanese Office Action mailed Feb. 21, 2006, directed to counterpart JP Application No. 2003-190549.
Han, J. et al. (1998). “AlGaN/GaN Quantum Well Ultraviolet Light Emitting Diodes,”Applied Physics Letters73(12):1688-1690.
Iwaya, M. et al. (2002). “Suppression of Phase Separation of AIGaN During Lateral Growth and Fabrication of High-efficiency UV-LED on Optimized AIGaN,”Journal of Crystal Growth237-239:951-955.
Shatalov, M. et al. (2002). “Deep Ultraviolet Light-Emitting Diodes Using Quaternary AlinGaN Multiple Quantum Wells, ”IEEE Journal on Selected Topics in Quantum Electronics8(2):302-309.
Morita Daisuke
Nagahama Shinichi
Sakamoto Keiji
Sano Masahiko
Yamamoto Masashi
Morrison & Foerster / LLP
Nichia Corporation
Wilson Allan R.
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