Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-05-27
2008-05-27
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21699
Reexamination Certificate
active
07378334
ABSTRACT:
A substrate1for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers3to5, an active layer6and p-type nitride semiconductor layers7to8are laminated to form a stack of nitride semiconductor on the first face of the substrate1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate1for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer9and the second bonding layer11are faced with each other and, then, pressed with heat to bond together. After that, the substrate1for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.
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Morita Daisuke
Nagahama Shinichi
Sakamoto Keiji
Sano Masahiko
Yamamoto Masashi
Le Thao X.
Morrison & Foerster / LLP
Nichia Corporation
Ullah Elias
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