Nitride semiconductor device and process for producing the same

Details Nitride semiconductor device and process for producing the same Nitride semiconductor device and process for producing the same

2005-04-20

2010-12-07

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S022000, C438S039000

Reexamination Certificate

active

07846820

ABSTRACT:
A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate101; step (B) of forming on the substrate101a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1)104on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1:x′+y′+z′=1)106on the AlxGayInzN crystals104, the Alx′Gay′Inz′N crystal106containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals104with the Alx′Gay′Inz′N crystal106to form one nitride semiconductor layer120.

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International Search Report for corresponding Application No. PCT/JP2005/007525 mailed Jul. 12, 2005.
MRS Internet J. Nitride Seimconductor Research; 3,8; 1998 (cited in [0096] of the specification).
Shin-ichi Nagahama et al.; High-Power and Long-Lifetime InGaN Multi-Quantam-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates; Japan Journal of Applied Physics; vol. 39; pp. L648-L650; 2000 (cited in [0003] of the specification).
Form PCT/IPEA/416 for International Application No. PCT/JP2005/007525 and concise explanation.

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