Nitride semiconductor device and method of manufacturing the...

Details Nitride semiconductor device and method of manufacturing the... Nitride semiconductor device and method of manufacturing the...

2005-11-16

2010-11-30

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C438S048000

Reexamination Certificate

active

07842962

ABSTRACT:
A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

REFERENCES:
patent: 6653215 (2003-11-01), Brown et al.
patent: 2002/0081800 (2002-06-01), Morita
patent: 2002/0121863 (2002-09-01), Morishita
patent: 2008/0116575 (2008-05-01), Shiozawa et al.
patent: 2000-223742 (2000-08-01), None
Joon Seop Kwak, et al. “Temperature-Dependent Contact Resistivity of the Nonalloyed Ohmic Contacts to p-GaN”; Journal of Applied Physics; vol. 95; No. 10; May 15, 2004; pp. 5917-5919.

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