Nitride semiconductor device and method for producing...

Details Nitride semiconductor device and method for producing... Nitride semiconductor device and method for producing...

2011-06-14

2011-06-14

Stark, Jarrett J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257SE29201

Reexamination Certificate

active

07960782

ABSTRACT:
A nitride semiconductor device includes: a nitride semiconductor structure portion including a first layer made of an n-type group III nitride semiconductor, a second layer made of a group III nitride semiconductor containing a p-type impurity provided on the first layer and an n-type region formed on a part of the second layer, and having a wall surface extending over the first layer, a body region of the second layer other than the n-type region and the n-type region; a gate insulating film formed such that the gate insulating film is opposed to the body region on the wall surface; a gate electrode formed such that the gate electrode is opposed to the body region through the gate insulating film; a source electrode formed such that the source electrode is electrically connected to the n-type region; a drain electrode formed such that the drain electrode is electrically connected to the first layer; and a body electrode formed such that the body electrode is electrically connected to the body region.

REFERENCES:
patent: 4568958 (1986-02-01), Baliga
patent: 6461918 (2002-10-01), Calafut
patent: 2001/0023959 (2001-09-01), Harada et al.
patent: 2003/0082860 (2003-05-01), Yoshida et al.
patent: 2007/0267672 (2007-11-01), Hokomoto et al.
patent: 2003-163354 (2003-06-01), None

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