Nitride semiconductor device and method for manufacturing...

Details Nitride semiconductor device and method for manufacturing... Nitride semiconductor device and method for manufacturing...

2009-10-29

2010-11-30

Fahmy, Wael M (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000, C438S172000, C257SE21090, C257SE21093, C257SE21098, C257SE21110

Reexamination Certificate

active

07842532

ABSTRACT:
A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.

REFERENCES:
patent: 6072818 (2000-06-01), Hayakawa
patent: 6734503 (2004-05-01), Hata et al.
patent: 6977953 (2005-12-01), Hata et al.
patent: 2828002 (1998-09-01), None
Shuji Nakamura, et al., “Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes”, Jpn. J. Appl. Phys. vol. 34 (1995) pp. L1332-L1335.
Shuji Nakamura, et al., “InGaN/GaN/AiGaN-Based Laser Diodes With Modulation-Doped Strained-Layer Superlattices Grown on an Epitaxially Laterally Overgrown GaN Substrate”.

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