Nitride semiconductor device and method for manufacturing...

Details Nitride semiconductor device and method for manufacturing... Nitride semiconductor device and method for manufacturing...

2006-11-13

2009-08-18

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S195000, C257S196000, C257S197000, C257S201000

Reexamination Certificate

active

07576373

ABSTRACT:
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a first p-AlGaN layer, a second p-AlGaN layer and a high concentration p-GaN layer are formed in this order on a substrate. A gate electrode establishes ohmic contact with the high concentration p-GaN layer. A source electrode and a drain electrode are formed on the undoped AlGaN layer. Two-dimensional electron gas generated at the interface between the undoped AlGaN layer and the undoped GaN layer and the first and second p-AlGaN layers form a pn junction in a gate region. The second p-AlGaN layer covers a SiN film in part.

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J. K. Abrokwah et al., “High-Performance Self-Aligned p+
GaAs Epitaxial JFET's Incorporating AlGaAs Etch-Stop Layer” IEEE Transactions on Electron Devices, vol. 37, No. 6, pp. 1529-1531, 1990.
L. Zhang et al., “Epitaxially-Grown GaN Junction Field Effect Transistors” IEEE Transactions on Electron Devices, vol. 47, No. 3, pp. 507-511, 2000.

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