Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-03-01
2011-03-01
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
Reexamination Certificate
active
07898002
ABSTRACT:
A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
REFERENCES:
patent: 7038252 (2006-05-01), Saito et al.
patent: 7467918 (2008-12-01), Yao et al.
patent: 7576373 (2009-08-01), Hikita et al.
patent: 2003/0209762 (2003-11-01), Nishii et al.
patent: 2005/0173728 (2005-08-01), Saxler
patent: 2006/0060871 (2006-03-01), Beach
patent: 2006/0175633 (2006-08-01), Kinzer
patent: 2006/0273347 (2006-12-01), Hikita et al.
patent: 2007/0176125 (2007-08-01), Natori et al.
patent: 2007/0176215 (2007-08-01), Yanagihara et al.
patent: 2007/0278521 (2007-12-01), Ishida et al.
patent: 2008/0054300 (2008-03-01), Nikkel et al.
patent: 2009/0121775 (2009-05-01), Ueda et al.
patent: 2009/0146182 (2009-06-01), Hikita et al.
patent: 11-261053 (1999-09-01), None
patent: 2004-273486 (2004-09-01), None
patent: 2005-244072 (2005-09-01), None
Kawasaki, T., et al., “Normally-off AIGaN/GaN HEMT with Recessed Gate for High Power Applications”, Solid State Devices and Materials Tech. Digest, 2005, pp. 206-207.
Kuroda, M., et al., “Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire”, Solid State Devices and Materials Tech. Digest, 2005, pp. 470-471.
Hikita Masahiro
Tanaka Tsuyoshi
Ueda Tetsuzo
Uemoto Yasuhiro
Yanagihara Manabu
McDermott Will & Emery LLP
Nguyen Dao H
Nguyen Tram H
Panasonic Corporation
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