Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-01-04
2011-01-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S196000, C257SE29248
Reexamination Certificate
active
07863649
ABSTRACT:
A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer.
REFERENCES:
patent: 7038252 (2006-05-01), Saito et al.
patent: 7576373 (2009-08-01), Hikita et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2005/0189559 (2005-09-01), Saito et al.
patent: 2006/0006414 (2006-01-01), Germain et al.
patent: 2006/0060871 (2006-03-01), Beach
patent: 2006/0255364 (2006-11-01), Saxler et al.
patent: 2006/0273347 (2006-12-01), Hikita et al.
patent: 2007/0278521 (2007-12-01), Ishida et al.
patent: 2008/0079023 (2008-04-01), Hikita et al.
patent: 2008/0087915 (2008-04-01), Uemoto et al.
patent: 2008/0179694 (2008-07-01), Nakazawa et al.
patent: 2008/0258243 (2008-10-01), Kuroda et al.
patent: 2009/0121775 (2009-05-01), Ueda et al.
patent: 2009/0189187 (2009-07-01), Briere et al.
patent: 11-261053 (1999-09-01), None
patent: 2004-273486 (2004-09-01), None
patent: 2005-243727 (2005-09-01), None
patent: 2005-244072 (2005-09-01), None
Kawasaki T., et al., “Normally-off AIGaN/GaN HEMT with Recessed Gate for High Power Applications”, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005, pp. 206-207.
Kuroda, M., et al., “Normally-off Operation of Non-polar AIGaN/GaN Heterojunction FETs Grown on R-plane Sapphire”, Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005, pp. 470-471.
Hikita Masahiro
Ueda Tetsuzo
McDermott Will & Emery LLP
Ngo Ngan
Panasonic Corporation
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