Nitride semiconductor device and manufacturing method thereof

Details Nitride semiconductor device and manufacturing method thereof Nitride semiconductor device and manufacturing method thereof

2011-05-03

2011-05-03

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

C257S076000, C257S192000, C257S192000, C257S618000, C257S627000, C257S623000, C257S625000, C257SE29246, C257SE21108, C438S479000, C438S507000

Reexamination Certificate

active

07936049

ABSTRACT:
It is an object of the present invention to provide a nitride semiconductor device with low parasitic resistance by lowering barrier height to reduce contact resistance at an interface of semiconductor and metal. The nitride semiconductor device includes a GaN layer, a device isolation layer, an ohmic electrode, an n-type Al0.25Ga0.75N layer, a sapphire substrate, and a buffer layer. A main surface of the n-type Al0.25Ga0.75N layer is on (0 0 0 1) plane as a main surface, and concaves are arranged in a checkerboard pattern on the surface. The ohmic electrode contacts the sides of the concaves of the n-type Al0.25Ga0.75N layer, and the sides of the concaves are on non-polar surfaces such as (1 1 −2 0) plane or (1 −1 0 0) plane.

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