Nitride semiconductor device and fabrication method thereof,...

Details Nitride semiconductor device and fabrication method thereof,... Nitride semiconductor device and fabrication method thereof,...

2005-08-09

2005-08-09

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257S615000, C117S926000

Reexamination Certificate

active

06927149

ABSTRACT:
A nitride semiconductor device comprising a substrate (101) having trenches (102b) each formed of a cavity and peaks (102a) formed from a group III nitride on the surface thereof; a nitride semiconductor layer (106) formed on the substrate (101); and a nitride semiconductor multilayered structure that is formed on the nitride semiconductor layer (106) and has an active layer, wherein the lattice constant of the substrate (101) is different from that of the group III nitride substance (102a), the substrate (101) has a mask (104a) formed from a dielectric (104), the mask (104a) is formed only on the side surfaces of the peaks (102a), the upper surfaces of the peaks (102a) are exposed and the substrate (101) is exposed in the trenches (102b), a height L1of the mask (104a) is not less than 50 nm and not more than 5000 nm, a width L2of the trench (102b) is not less than 5000 nm and not more than 50000 nm, and an aspect ratio L1/L2of the trenches (102b) is not less than 0.001 and not more than 1.0. This structure enhances the reliability of the nitride semiconductor devices.

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