Nitride semiconductor device and a manufacturing method...

Details Nitride semiconductor device and a manufacturing method... Nitride semiconductor device and a manufacturing method...

2005-12-22

2009-02-03

Chen, Jack (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S079000, C257SE33062

Reexamination Certificate

active

07485900

ABSTRACT:
The present invention provides a nitride semiconductor device wherein on a substrate having a first main surface and a second main surface, a nitride semiconductor layer is formed on the first main surface and an electrode is formed on the second main surface, wherein the substrate comprises dislocation concentration regions, and on the dislocation concentration regions on the second main surface of the substrate, the electrode having at least an opening region is formed, and the edge surface of the substrate has a region roughly matching the edge surface of the electrode formed on the dislocation concentration regions. With the present invention, device separation can be stabilized and a nitride semiconductor device is provided having good ohmic contact between a nitride semiconductor layer and electrode.

REFERENCES:
patent: 2002/0000558 (2002-01-01), Morimoto
patent: 2003/0001238 (2003-01-01), Ban
patent: 2003/0030053 (2003-02-01), Kawakami et al.
patent: 2004/0245540 (2004-12-01), Hata et al.
patent: 11/214798 (1999-08-01), None

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