Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2007-06-21

2010-06-08

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S194000, C257SE29246

Reexamination Certificate

active

07732837

ABSTRACT:
In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer.

REFERENCES:
patent: 6555851 (2003-04-01), Morizuka
patent: 2005/0189559 (2005-09-01), Saito et al.
patent: WO 2004068590 (2004-08-01), None
Hu, et al., “IEE Electronics Letters”, vol. 36, No. 8, pp. 753-754, (Apr. 13, 2000).

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