Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2006-12-29

2010-11-02

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S027000, C257S192000, C257S195000, C257SE29246, C257SE29247, C257SE29248, C257SE29249, C257SE29250, C257SE29251, C257SE29252

Reexamination Certificate

active

07825434

ABSTRACT:
A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

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Norio Tsuyukuchi et al. “Low Leakage Current Enhancement Mode AIGaN/GaN Heterostructure Field Effect Transistor Using p-Type Gate Contact” Mar. 10, 2006. Japanese Journal of Applied Physics Vol. 45, No. 11.
Masahiro Hikita et al., “350V/150A AIGa/GaN power HFET on Silicon substrate with source-via grounding (SVG) structure,” Technical Digest of 2004 International Electron Devices Meeting, 2004 IEEE, p. 803.
O. Ambacher et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AIGaN/GaN heterostructures,” Journal of Applied Physics, Mar. 15, 1999, pp. 3222-3233, vol. 85, No. 6, 1999 American Institute of Physics.
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