Nitride semiconductor and method for manufacturing same

Details Nitride semiconductor and method for manufacturing same Nitride semiconductor and method for manufacturing same

2011-08-23

2011-08-23

Stark, Jarrett J (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S103000, C257SE33025, C257SE21085, C438S483000

Reexamination Certificate

active

08004065

ABSTRACT:
A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.

REFERENCES:
patent: 2006/0209395 (2006-09-01), Sasaoka
patent: 2006/0257626 (2006-11-01), Schlesser et al.
patent: 2003-077841 (2003-03-01), None
patent: 2007-157765 (2007-06-01), None
Motoki, et al, Dislocation reduction in GaN crystal by advanced-DEEP, Journal of Crystal Growth 305 (2007) 377-383.

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