Nitride optoelectronic devices with backside deposition

Details Nitride optoelectronic devices with backside deposition Nitride optoelectronic devices with backside deposition

2008-07-15

2008-07-15

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S478000, C438S479000

Reexamination Certificate

active

07399653

ABSTRACT:
Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.

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