Nitride nanowires and method of producing such

Details Nitride nanowires and method of producing such Nitride nanowires and method of producing such

2008-01-14

2010-11-09

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21090, C257SE33025

Reexamination Certificate

active

07829443

ABSTRACT:
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

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