Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2008-05-13
2008-05-13
Whitehead, Jr., Carl W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33064
Reexamination Certificate
active
07372081
ABSTRACT:
A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
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ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode; K.H.Choi, J.Y. Kim, Y.S. Lee, H.J. Kim, Thin Solid Fils 341 (1999) 152-155.
Leem Dong-seok
Seong Tae-Yeon
Song June-O
Buchanan & Ingersoll & Rooney PC
Dolan Jennifer M
Gwangju Institute of Science and Technology
Samsung Electronics Co,. Ltd.
Whitehead Jr. Carl W.
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