Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-06-04
2000-08-22
Krynski, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438738, 438740, 438741, 438744, H01L 2105
Patent
active
061072087
ABSTRACT:
In one embodiment, the present invention relates to a method of etching silicon nitride disposed over a copper containing layer by etching at least a portion of the silicon nitride using a nitride etch gas mixture comprising from about 5 sccm to about 15 sccm of CHF.sub.3, about 5 sccm to about 15 sccm of nitrogen and about 80 sccm to about 120 sccm of a carrier gas. In another embodiment, the present invention relates to a method of processing a semiconductor substrate comprising silicon nitride disposed over a copper containing layer, involving etching at least a portion of the silicon nitride using a nitride etch gas mixture comprising CHF.sub.3, nitrogen and Ar.
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Cheng Jerry
Wang Fei
Advanced Micro Devices , Inc.
Grendzynski Michael E.
Krynski William
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