Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2000-10-03
2002-06-25
Niebling, John F. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S299000, C438S592000, C438S664000, C438S683000
Reexamination Certificate
active
06410428
ABSTRACT:
BACKGROUND OF THE INVENTION
High temperature CVD dichlorosilane (DC) tungsten silicide (WSi
x
) and in-situ doped CVD polysilicon (poly) have been widely used as gate materials in VLSI metal oxide semiconductors (MOS). However, low temperature (>600° C.) oxidation of WSi
x
makes the WSi
x
process control very critical on tungsten (W) ratio and makes later process integration more difficult.
U.S. Pat. No. 6,100,193 to Suehiro et al. describes an in-situ tungsten deposition and an SiN CVD step for a tungsten gate.
U.S. Pat. No. 5,981,380 to Trivedi et al., U.S. Pat. No. 5,924,000 to Linliu, and U.S. Pat. No. 5,888,588 to Nagabushnam et al. describe various WSi
x
, processes.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the present invention to provide a method of forming tungsten polycide gate electrodes without tungsten silicide oxidation.
Other objects will appear hereinafter.
It has now been discovered that the above and other objects of the present invention may be accomplished in the following manner. Specifically, a semiconductor wafer having a silicon substrate is provided. A WSi
x
layer is formed over the silicon substrate. An SiN layer is formed upon the WSi
x
layer in the absence of O
2
; whereby the WSi
x
layer is non-oxidized.
REFERENCES:
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5888588 (1999-03-01), Nagabushnam et al.
patent: 5924000 (1999-07-01), Linliu
patent: 5981380 (1999-11-01), Trivedi et al.
patent: 6037216 (2000-03-01), Liu et al.
patent: 6100193 (2000-08-01), Suehiro et al.
patent: 6124165 (2000-09-01), Lien
Wolf, “silicon processing for the VLSI ERA” 1986, vol. 1, pp. 191-195.
Chiang Wen-Hou
Huang Cheng-Sung
Ackerman Stephen B.
Nguyen Thanh
Niebling John F.
ProMos Technologies Inc.
Saile George O.
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