Nitride based semiconductor optical device, epitaxial wafer...

Details Nitride based semiconductor optical device, epitaxial wafer... Nitride based semiconductor optical device, epitaxial wafer...

2010-08-06

2010-12-14

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000, C257SE33034

Reexamination Certificate

active

07851243

ABSTRACT:
In the nitride based semiconductor optical device LE1, the strained well layers21extend along a reference plane SR1tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

REFERENCES:
patent: 6844572 (2005-01-01), Sawaki et al.
patent: 2001/0010372 (2001-08-01), Takeuchi et al.
patent: 2002/0008242 (2002-01-01), Hata
patent: 2002/0084467 (2002-07-01), Krames et al.
patent: 2003/0089917 (2003-05-01), Krames et al.
patent: 2003/0178702 (2003-09-01), Sawaki et al.
patent: 2005/0230690 (2005-10-01), Hata
patent: 10-012960 (1998-01-01), None
patent: 10-135576 (1998-05-01), None
patent: 11-112029 (1999-04-01), None
patent: 2000232259 (2000-08-01), None
patent: 2001251022 (2001-09-01), None
patent: 2003158294 (2003-05-01), None
patent: 2003347585 (2003-12-01), None
patent: 2005-175056 (2005-06-01), None
patent: 2006134987 (2006-05-01), None
patent: 2007235107 (2007-09-01), None
patent: 2008177438 (2008-07-01), None
patent: WO-2006109418 (2006-10-01), None
patent: WO-2006130696 (2006-12-01), None
patent: WO-2007009035 (2007-01-01), None
Takeuchi et al., “Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells”, Japanese Journal of Applied Physics, Feb. 2000, pp. 413-416, vol. 39, Part 1, No. 2A.
Seoung-Hwan Park, “Crystal Orientation Effects on Electronic Properties of Wurtzite InGaN/GaN Quantum Wells”, Journal of Applied Physics, Jun. 15, 2002, pp. 9904-9908, vol. 91, No. 12.
Tyagi et al., “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates”, Japanese Journal of Applied Physics, 2007, pp. L129-L131, vol. 46, No. 7.
Takeuchi et al., “Quantum-Confined Stark Effect Due to Piezoelectric Fields in GaInN Strained Quantum Wells”, Japanese Journal of Applied Physics, Apr. 1, 2007, pp. L382-L385, vol. 36, Part 2, No. 4A.

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