Nitride based semiconductor device with concave gate region

Details Nitride based semiconductor device with concave gate region Nitride based semiconductor device with concave gate region

2008-01-31

2010-11-23

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246

Reexamination Certificate

active

07838904

ABSTRACT:
In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.

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