Nitride based semiconductor device and process for preparing...

Details Nitride based semiconductor device and process for preparing... Nitride based semiconductor device and process for preparing...

2008-01-15

2008-01-15

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21098

Reexamination Certificate

active

07319064

ABSTRACT:
A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.

REFERENCES:
patent: 2006/0102926 (2006-05-01), Kikkawa et al.

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